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Monolithic InGaP-GaAs HBT receiver front-end with 6 mW DC power consumption for 5 GHz band WLAN applications

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3 Author(s)
Yeh, K.-Y. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lu, S.S. ; Lin, Y.-S.

A very low power consumption (6 mW) 5 GHz band receiver front-end using InGaP-GaAs HBT technology is reported. The receiver front-end is composed of a cascode low noise amplifier followed by a double-balanced mixer with the RF transconductor stage placed above the Gilbert quad for direct-coupled connection. The RF band of this receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz IF frequency. Input-return-loss (S11) in RF port smaller than -12 dB and excellent power-conversion-gain of 35.4 dB are achieved. Input 1 dB compression point (P1dB) and input third-order intercept point (IIP3) of -24 and -3 dBm, respectively, are also achieved.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 24 )