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High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 μm

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6 Author(s)
Pfahler, C. ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiberg, Germany ; Manz, C. ; Kaufel, G. ; Kelemen, M.T.
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This study presents results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 μm at 20°C. The active layer of the samples consists of three compressively strained 10 nm wide Ga0.78In0.22Sb-QWs, separated by 20 nm wide lattice matched Al0.29Ga0.71As0.02Sb0.98 barriers. The QW region is surrounded by 400 nm wide Al0.29Ga0.71As0.02Sb0.98 separate confinement layers, followed by 2 μm thick Al0.84Ga0.16As0.06Sb0.94 n-doped and p-doped cladding layers. The lateral design is composed of a ridge-waveguide section followed by a trapezoidal amplifier. The rear facet is HR-coated with a reflectivity of 97% while the output facet was AR-coated with a reflectivity of ∼1%. The devices are finally mounted junction side down on copper heat sinks.

Published in:

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference:

7-11 Nov. 2004