Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Pfahler, C. ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiberg, Germany ; Manz, C. ; Kaufel, G. ; Kelemen, M.T.
more authors

This study presents results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 μm at 20°C. The active layer of the samples consists of three compressively strained 10 nm wide Ga0.78In0.22Sb-QWs, separated by 20 nm wide lattice matched Al0.29Ga0.71As0.02Sb0.98 barriers. The QW region is surrounded by 400 nm wide Al0.29Ga0.71As0.02Sb0.98 separate confinement layers, followed by 2 μm thick Al0.84Ga0.16As0.06Sb0.94 n-doped and p-doped cladding layers. The lateral design is composed of a ridge-waveguide section followed by a trapezoidal amplifier. The rear facet is HR-coated with a reflectivity of 97% while the output facet was AR-coated with a reflectivity of ∼1%. The devices are finally mounted junction side down on copper heat sinks.

Published in:

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference:

7-11 Nov. 2004