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A 20 GHz, tensile strained Ge photodetector on Si platform with detection spectrum for optical communications and on-chip applications

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10 Author(s)
Jifeng Liu ; Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA ; J. Michel ; W. Giziewicz ; D. D. Cannon
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This paper presents a 20 GHz Ge photodetector on Si platform that covers a broad detection spectrum from 850-1600 nm. This device has promising applications in high capacity optical communications and on-chip Si optoelectronic circuits.

Published in:

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE  (Volume:1 )

Date of Conference:

7-11 Nov. 2004