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Improved hot-electron reliability in strained-Si nMOS

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6 Author(s)
Onsongo, D. ; IBM Semicond. R&D Center, East Fishkill, NY, USA ; Kelly, D.Q. ; Dey, S. ; Wise, R.L.
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Strained-Si/relaxed-Si1-xGex structures provide a viable means of improving CMOS performance. For nMOS devices, the tensile strain in pseudomorphic Si on relaxed-Si1-xGex splits the six-fold degeneracy of the conduction band minimum, rendering increased electron mobility due to a lower in-plane effective mass and reduced intervalley scattering. In this paper, in addition to confirming enhanced performance for biaxial-strained-Si nMOS, we present hot-electron degradation characteristics for the first time, showing improvement over bulk Si.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 12 )