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Physical and electrical characteristics of HfTaO gate dielectric have been systematically investigated for the first time. Based on the X-ray diffraction spectra and high-resolution transmission electron microscope pictures, the crystallization temperature of HfO2 film is significantly increased with incorporating Ta, and the HfTaO with 43% Ta film remains amorphous after annealing at 950°C for 30 s. X-ray photoelectron spectroscopy results show that the formation of Si-O bonds in interfacial layer is increased with Ta concentration. The high atomic percentage of Si-O bonds may result in the HfTaO-Si interface inclining to SiO2-Si interface, as well as good interface properties. Hence, the interface states density (Dit) in HfTaO film is reduced by one order of magnitude compared with HfO2. In addition, charge trapping induced threshold voltage (Vth) instability in HfO2 and HfTaO films is compared using a pulsed Id--Vg measurement technique, and the Vth shift in HfTaO film is much lower than HfO2. This indicates that charge trapping in HfO2 film is significantly suppressed by incorporating Ta. Since both of the interface traps and charged traps in HfTaO film are less than in HfO2, more than twice higher peak mobility is achieved in HfTaO nMOSFETs, which is due to the suppression of Coulomb scattering caused by the interface traps and charged traps.