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Fabrication of metal gated FinFETs through complete gate silicidation with Ni

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5 Author(s)
J. Kedzierski ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Meikei Ieong ; T. Kanarsky ; Ying Zhang
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Metal-gate FinFETs were fabricated using complete gate silicidation with Ni, combining the advantages of metal-gate and double-gate transistors. NiSi-gate workfunction control is demonstrated using silicide induced impurity segregation of As, P, and B over a range of 400 mV. High device performance is achieved by integrating the NiSi metal gate with an epitaxial raised source/drain, silicided separately with CoSi2. Process considerations for this dual silicide integration scheme are discussed. Poly-Si gated FinFETs are also fabricated and used as references for workfunction and transconductance.

Published in:

IEEE Transactions on Electron Devices  (Volume:51 ,  Issue: 12 )