Cart (Loading....) | Create Account
Close category search window
 

Fabrication of metal gated FinFETs through complete gate silicidation with Ni

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kedzierski, J. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Meikei Ieong ; Kanarsky, T. ; Ying Zhang
more authors

Metal-gate FinFETs were fabricated using complete gate silicidation with Ni, combining the advantages of metal-gate and double-gate transistors. NiSi-gate workfunction control is demonstrated using silicide induced impurity segregation of As, P, and B over a range of 400 mV. High device performance is achieved by integrating the NiSi metal gate with an epitaxial raised source/drain, silicided separately with CoSi2. Process considerations for this dual silicide integration scheme are discussed. Poly-Si gated FinFETs are also fabricated and used as references for workfunction and transconductance.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 12 )

Date of Publication:

Dec. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.