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Analytical modeling of MOSFETs channel noise and noise parameters

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3 Author(s)
Asgaran, S. ; Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, Ont., Canada ; Deen, M.J. ; Chih-Hung Chen

Simple analytical expressions for MOSFETs noise parameters are developed and experimentally verified. The expressions are based on analytical modeling of MOSFETs channel noise, are explicit functions of MOSFETs geometry and biasing conditions, and hence are useful for circuit design purposes. Good agreement between calculated and measured data is demonstrated. Moreover, it is shown that including induced gate noise in the modeling of MOSFETs noise parameters causes ∼5% improvement in the accuracy of the simple expressions presented here, but at the expense of complicating the expressions.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 12 )