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Obtaining the right value of the saturation voltage VDSAT is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and thus, obtain more accurate results. Besides, the proposed technique allows for estimating the difference between the intrinsic and the extrinsic values of VDSAT, due to the parasitic drain/source resistances, thus enabling the use of this method in deep submicrometer technologies, down to 0.1 μm.