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A statistical model to predict grain boundary distribution in the channel of a polysilicon thin-film transistor (TFT) is proposed. The model is valid for arbitrary transistor size to grain size ratio, and is particularly useful to predict the grain boundary distribution of recrystallized large-grain polysilicon TFTs where the transistor size is comparable to the grain size and gives significant device-to-device variation. The model has been extensively verified by comparing it with statistical data obtained from TFTs fabricated using metal-induced-lateral-crystallization and regular solid-phase epitaxial techniques. Good agreements between the experimental results and model prediction are demonstrated.
Published in:
Electron Devices, IEEE Transactions on
(Volume:51
,
Issue:
12
)
Date of Publication: Dec. 2004
- Page(s):
- 2061 - 2068
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8216873
- Digital Object Identifier :
- 10.1109/TED.2004.838325
- Date of Current Version :
- 30 November 2004
- Issue Date :
- Dec. 2004
- Sponsored by :
- IEEE Electron Devices Society
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