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In this paper, the short-channel effect in ultrathin body (UTB) SOI Flash memory cell induced by the floating-gate is investigated by a newly developed two-dimensional analytical model. A concept of effective natural length (λeff) is introduced as a measure of the impact of the floating-gate on the scaling limit. Even though scaling the channel thickness can significantly reduce SCE in UTB MOSFET, it becomes less effective in floating-gate device due to the floating polysilicon induced gate coupling. To minimize the floating-gate induced SCEs, the drain to floating-gate coupling has to be minimized.
Published in:
Electron Devices, IEEE Transactions on
(Volume:51
,
Issue:
12
)
Date of Publication: Dec. 2004
- Page(s):
- 2054 - 2060
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8216872
- Digital Object Identifier :
- 10.1109/TED.2004.838327
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 November 2004
- Issue Date :
- Dec. 2004
- Sponsored by :
- IEEE Electron Devices Society
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