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132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology

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1 Author(s)
Meghelli, M. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

A -3.3-V half-rate clock 4:1 multiplexer implemented in a 210-GHz fT 0.13-μm SiGe-bipolar technology and operating up to 132 Gb/s is reported. Among many design challenges, the control of on-chop clock distribution was critical to achieve such a high data rate. At 100 Gb/s, the chip operates reliably down to -3.0-V supply voltage and up to 100°C chip temperature. The circuit consumes 1.45 W from a -3.3-V supply voltage and exhibits less than 340-fs RMS jitter on the output data.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 12 )