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Applying statistics to find the causes of variability in aluminum evaporation: a case study

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3 Author(s)
Aceves, M. ; Nat. Inst. for Res. on Astrophys., Opt. & Electron., Puebla, Mexico ; Hernandez, J.A. ; Murphy, R.

A study of the causes of variability in the thickness of aluminum deposited on silicon wafers is presented. A work team was assembled to define and characterize the process, equipment, and measuring techniques adequate to the available means. The most important variables were studied, and, through a variance analysis, the ones that contribute the most to the variability were selected. The relationship among the vital variables was established using the Taguchi technique. A test run was performed and the CPK showed an increase, effectively reducing the variability

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:5 ,  Issue: 2 )