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Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

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6 Author(s)
Bok-Hyung Lee ; Millimeter-wave Innovation Technol. Res. Center, Seoul, South Korea ; An, D. ; Mun-Kyo Lee ; Byeong-Ok Lim
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We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S/sub 21/ gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S/sub 21/ gain of 10.1 dB, a S/sub 11/ of -5.1 dB and a S/sub 22/ of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 12 )