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Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

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7 Author(s)
A. Koudymov ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; S. Rai ; V. Adivarahan ; M. Gaevski
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We report on the high-performance monolithically integrated RF switch based on metal-oxide-semiconductor III-N heterostructure field-effect transistors (MOSHFETs). The radio frequency (RF) switch microwave monolithic integrated circuit (MMIC) consists of three submicron-gate MOSHFETs connected into π-type configuration. In the 0-10 GHz frequency range, the insertion loss is less than 1dB and the isolation is better than 20 dB. The switching powers well exceed 20 W per 1mm of the active element width. The high performance parameters of the switch are achieved due to unique properties of III-nitride MOSHFET, which combines a low channel resistance and high breakdown voltage features of AlGaN/GaN HFETs and extremely low gate leakage currents, large gate voltage swing and low gate capacitance specific to insulated gate design. The combination of these parameters makes MOSHFETs excellent candidates for high-power switching. The experimental data obtained from the RF switch are in close agreement with the results of simulations.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:14 ,  Issue: 12 )