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120/spl deg/C uncooled operation of direct modulated 1.3/spl mu/m AlGaInAs-MQW DFB laser diodes for 10Gb/s telecom applications

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8 Author(s)
Shirai, S. ; High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan ; Tatsuoka, Y. ; Watatani, C. ; Ota, T.
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1.3 /spl mu/m AlGaInAs-MQW DFB laser diodes were fabricated for 10 Gb/s uncooled light sources. Applying an n-InGaAsP/n-InP buried grating, output power of 5 mW at 120/spl deg/C and clear eye opening at 105/spl deg/C for OC-192 mask was obtained.

Published in:

Optical Fiber Communication Conference, 2004. OFC 2004  (Volume:2 )

Date of Conference:

23-27 Feb. 2004

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