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50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers

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8 Author(s)
Martinelli, R.U. ; Sarnoff Corp., Princeton, NJ, USA ; Li, J. ; Khalfin, V. ; Braun, A.M.
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50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.

Published in:
Lasers and Electro-Optics, 2004. (CLEO). Conference on  (Volume:1 )

Date of Conference: 16-21 May 2004

Print ISBN:
1-55752-777-6
INSPEC Accession Number:
8291359
Conference Location :
San Francisco, CA
Product Type:
Conference Publications

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