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Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3 /spl mu/m wavelength range

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4 Author(s)
Grau, Markus ; Walter Schottky Inst., Munchin Tech. Univ., Garching, Germany ; Lin, Chun ; Dier, Oliver ; Amann, M.-C.

GaInAsSb-AlGaAsSb type-I quantum well laser diodes with compressively strained active regions were fabricated. The ridge waveguide lasers show room-temperature continuous wave operation in the wavelength range from 2.2 /spl mu/m to 3 /spl mu/m.

Published in:

Lasers and Electro-Optics, 2004. (CLEO). Conference on  (Volume:1 )

Date of Conference:

16-21 May 2004

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