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Silicon single crystalline MEMS shunt contact switch for RF application

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3 Author(s)
O. Aharon ; Facultv of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; S. Feldman ; Y. Nemirovsky

A micro-electro-mechanical (MEMS) DC to RF shunt switch was fabricated using a bulk micromachining process for single crystal silicon. The switch was vertically integrated to a microwave circuit using flip-chip bonding technology. The pull-in voltage and switching time were measured. Also, RF characterization of switch states was performed. This new design offers the potential for a high power applications switch. The concept of the described packaged switch offers a stand alone switch, which is not dependent on substrate material or technology.

Published in:

Electrical and Electronics Engineers in Israel, 2004. Proceedings. 2004 23rd IEEE Convention of

Date of Conference:

6-7 Sept. 2004