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Strain engineered Ge photodetectors on Si platform for broad band optical communications

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7 Author(s)
Jifeng Liu ; Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA ; Cannon, Douglas D. ; Wada, Kazumi ; Jongthammanurak, S.
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This paper presents a strain engineering of Ge photodetectors on Si to cover both C-band and L-band. This high responsivity, Si-CMOS compatible device has promising applications in the next generation of broad band optical communications.

Published in:

Lasers and Electro-Optics, 2004. (CLEO). Conference on  (Volume:2 )

Date of Conference:

16-21 May 2004