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High sensitivity silicon-based VIS/NIR photodetectors

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2 Author(s)
Carey, J.E. ; Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA ; Mazur, E.

We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PlN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.

Published in:

Lasers and Electro-Optics, 2004. (CLEO). Conference on  (Volume:2 )

Date of Conference:

16-21 May 2004