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Design of RF CMOS low noise amplifiers using a current based MOSFET model

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2 Author(s)
Baroncini, V.H.V. ; Centro Fer. de Educacao Technol. do Parana, Brazil ; da Costa Gouveia-Filho, O.

This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.

Published in:

Integrated Circuits and Systems Design, 2004. SBCCI 2004. 17th Symposium on

Date of Conference:

7-11 Sept. 2004