Cart (Loading....) | Create Account
Close category search window
 

SESO memory: A 3T gain cell solution using ultra thin silicon film for dense and low power embedded memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ishii, Tomoyuki ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Osabe, T. ; Mine, T. ; Sano, T.
more authors

This work presents a gain-cell solution in which a novel ultrathin poly-silicon film transistor provides the basis for dense and low-power embedded random-access memory. This is made possible by the 2-nm-thick channel of the new transistor (single-electron shut off transistor, or SESO transistor), which realizes a quantum-confinement effect that produces a low leakage current value of only 10-19 A at room temperature. Combining with vertical SESO structure, 3T gain cell achieves 1/3 the cell area of SRAM. Using circuit techniques, power consumption of SESO memory is expected to be lower than SRAM. The memory has potential to solve the power and stability problem that SRAM is going to face in the near future.

Published in:

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Date of Conference:

3-6 Oct. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.