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A robust large signal non-quasi-static MOSFET model for circuit simulation

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2 Author(s)
Wang, H. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Gildenblat, G.

This work introduces a surface-potential-based compact non-quasi-static (NQS) MOSFET model that solves the current continuity equation, works in all regions of MOSFET operation (including accumulation, depletion, and inversion regions) and can be implemented into SPICE-based circuit simulators. The new model is obtained by extending the previously reported spline-collocation method and has been implemented in Verilog-A code. The study of NQS effects in several important circuits is included and the model is verified by comparison with direct numerical solution of the continuity equation.

Published in:

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Date of Conference:

3-6 Oct. 2004