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Effect of Ge deposition rate on growth and optical properties of Ge(Si)/Si(001) self-assembled islands

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6 Author(s)
M. V. Shaleev ; Inst. for Phys. of Microstruct., Nizhny Novgorod State Univ., Russia ; Z. F. Krasilnik ; D. N. Lobanov ; A. V. Novikov
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In this paper we study the growth and photoluminescence spectra of GeSi/Si(001) self-assembled islands grown in wide range of Ge deposition rate (/spl nu//sub Ge/=0.1/spl divide/0.75 /spl Aring//s). AFM studies of these structures revealed that for all Ge growth rates the dominant island species is the dome-shaped islands. It was found that the lateral size of dome islands is decreased and their surface density is increased with increasing of /spl nu//sub Ge/. The decreasing of the lateral size is connected to increasing of Ge content in islands and part of surface occupied by the islands. The red-shift of the island related photoluminescence peak was observed during the island Ge growth rate increasing. This shift is associated with increasing of Ge content in islands.

Published in:

Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on

Date of Conference:

1-5 July 2004