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High-sensitivity, high-dynamic range 768 × 576 pixel CMOS image sensor

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5 Author(s)
W. Brockherde ; Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany ; A. Bussmann ; C. Nitta ; B. J. Hosticka
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This communication describes a high-sensitivity, high dynamic range 768×576 pixel image sensor fabricated in 0.5 μm standard CMOS technology and its design. The pixel pitch is 10 μm×10 μm with a fill factor of 50% while the chip area is 90 mm2. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm2 at 635 nm wavelength. This yields a sensitivity of just 4.9 ml× at 20 ms integration time which makes it also suitable for night vision applications.

Published in:

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Date of Conference:

21-23 Sept. 2004