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A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM

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2 Author(s)
Leroux, P. ; ESAT-MICAS, Katholieke Univ., Leuven, Belgium ; Steyaert, M.

This work presents a 5 GHz LNA with on-chip ESD-protection provided by an integrated inductor. The circuit is implemented in a standard 0.18 μm CMOS technology. The LNA is matched at both input and output. It achieves a power gain of 20 dB with a noise figure of 3.5 dB at a power consumption of only 15 mW including the output buffer. The protection level complies with the class II HBM standard of 2 kV.

Published in:

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Date of Conference:

21-23 Sept. 2004

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