This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 μm CMOS technology and occupies an area of 0.9×0.75 mm2 with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40°C to 80°C) with above 10 dB extinction ratio.
Published in:
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Date of Conference: 21-23 Sept. 2004