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Novel 3-dimensional 46F2 SRAM technology with 0.294um2 S3 (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)

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16 Author(s)
Jang, J.H. ; R&D Centre, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea ; Jung, S. ; Kang, Y.H. ; Cho, W.
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We have realized a 46F2 SRAM cell size of 0.294 μm2 with 80 nm technology and single stack S3 cell technology. SSTFTs and vertical node contacts are major keys in the S3 cell technology. The stacked single crystal silicon thin film is developed for the load pMOS SSTFT of the S3 SRAM cell. The load pMOS SSTFT is stacked on ILD to reduce the SRAM cell size. Fully working 64 Mbit SRAM is achieved by this S3 cell technology. The basic reliability of SSTFT, with 80 nm length, is also investigated in this study.

Published in:

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Date of Conference:

21-23 Sept. 2004