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Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

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7 Author(s)
Hong, S.H. ; Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea ; Koo, B.Y. ; Jeon, T.S. ; Hyun, S.J.
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The plasma nitrided gate oxide process has been developed and applied for mobile DRAM with low operating voltage. As a result, we confirm that plasma nitrided gate oxide can block the boron penetration in DRAM, which has a higher thermal budget than other devices. The nitrogen bonding status and profile are investigated to check the change in transistor and gate oxide characteristics.

Published in:

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Date of Conference:

21-23 Sept. 2004