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In this paper, a new analytical model for the DC current of organic thin-film transistors is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. It accurately accounts for below-threshold, linear and saturation operating conditions via a single formulation. Furthermore, the model does not require the explicit definition of the threshold and saturation voltages as input parameters, which are rather ambiguously defined. The model is also suitable for CAD applications.