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90nm RF CMOS technology for low-power 900MHz applications [amplifier example]

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12 Author(s)
Ramos, J. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Mercha, A. ; Jeamsaksiri, W. ; Linten, D.
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This work emphasizes the low power capabilities of a 90 nm RF CMOS technology and a portfolio of high Q passive components for low-power portable applications around 900 MHz. The experimental results mainly focus on the trade-off needed to account for an optimal operation in weak inversion for low-power applications. The DC gain, the bandwidth and the distortion are discussed to evaluate the possibilities offered by the CMOS technology scaling. The achievements are illustrated for the first time by the good performance of a fully integrated low-noise amplifier operating in moderate inversion at 900 MHz.

Published in:

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Date of Conference:

21-23 Sept. 2004