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High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy

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4 Author(s)

This work presents the recent progress in scanning spreading resistance microscopy( SSRM) capabilities highlighting enhanced spatial resolution (<5 nm) and excellent concentration sensitivity (<20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90 nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40 nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.

Published in:

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Date of Conference:

21-23 Sept. 2004