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High efficiency rectifier based on silicon carbide single switch resonance reset forward converter with ZVS-ON condition

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1 Author(s)
Melkonyan, A. ; Power Electron. & Syst., Siemens AG, Munich, Germany

This paper reports the first practical realisation of the zero voltage switching (ZVS) condition in a single switch resonance reset forward converter. Power limits in single switch topology are extended by introducing an application of the new silicon carbide switch (SiC JFET) in the resonant reset converter as a single ended counterpart to the multiswitch topologies in high power rectifiers. Obtaining ZVS-ON condition increases the efficiency furthermore. Additionally, paper explores the system impact of silicon carbide power devices in power converters showing designers not only the technical benefits, but also cost aspects. Proposed single switch resonant reset approach is given to utilise the semiconductor devices more efficiently, obtain higher power density, higher efficiency and lower system costs. A variable frequency control algorithm applied to manage the proposed converter and experimental results confirming the theoretical calculations finalise the paper.

Published in:

Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual  (Volume:1 )

Date of Conference:

20-25 June 2004

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