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Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process

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5 Author(s)
Murakami, K. ; Res. Center For Mater. Sci. at Extreme Conditions, Osaka Univ., Japan ; Yamasaki, N. ; Abo, S. ; Wakaya, F.
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In this study, the thermal annealing effects on a single field emitter from the view point of the leakage current between the gate and cathode were investigated. The emission efficiency and percentage of working nano electron sources fabricated beam assisted processes were improved by thermal annealing. Thus the post annealing after beam-assisted processes is effective in reducing leakage current in nano electron sources.

Published in:

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Date of Conference:

11-16 July 2004