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Electron field emission property of boron doping nano-crystalline diamond

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5 Author(s)
Y. C. Lee ; Dept. of Mater Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; S. J. Lin ; J. H. Huang ; C. T. Chia
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The effects of boron doping on the nucleation behavior and the characteristics of nano-crystalline diamond (NCD) films were investigated. NCD films were prepared by microwave plasma enhanced chemical vapor deposition and were grown on mirror-polished p-type Si(100) substrate by bias enhanced growth technique. The morphologies and bonding structures of the films were characterized by field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray diffraction. The increase in proportion of sp2-bonded grain boundaries in finer grain NCD films is assumed to be the main modifying factor in the electron field emission of the film.

Published in:

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Date of Conference:

11-16 July 2004