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Field emission properties of selectively grown carbon nanotubes for electron emitters in microwave power amplifier

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9 Author(s)
Han, Jae-Hee ; Sung Kyun Kwan Univ., Suwon, South Korea ; Soo Hong Lee ; Berdinsky, A.S. ; Yoo, Ji-Beom
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We have directly grown CNTs on the metal substrates by direct-current plasma-enhanced chemical-vapor deposition (DC-PECVD) using a gas mixture of C2H2 and NH3 at relatively low temperature (550 °C). In this study, we report field emission properties of CNTs depending on pattern sizes and spacings. Field-emission characteristic of CNTs was evaluated in a vacuum of 10-6 Torr in a parallel diode configuration. It is found that there is a correlation between pattern morphologies (such as window area, spacing, and dimension of window edge, etc.) and the field-emission properties. Furthermore, we found that the contact resistance between CNTs and substrate is a crucial factor for the saturation of field emission from CNTs.

Published in:

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Date of Conference:

11-16 July 2004

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