By Topic

Micro-Raman scattering study of strain induced by compositional variation in single crystalline Si1-xGex discs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. R. Islam ; Dept. of Electron. & Information Sci., Kyoto Inst. of Technol., Japan ; M. Yamada

Micro-Raman scattering (MRS) study has been made to investigate residual strain in single crystalline Si1-xGex discs. It is found that the residual strain is induced by the compositional variation along the radial direction of disc sample, although there is no strain when the composition is uniform over the disc sample. It is also found that the induced strain is relaxed near the edge of disc sample. The residual strain value is evaluated to be of the order of 10-3 for the parabolic-like variation of composition ranged from 0.112 at the center to the 0.143 at the edge of the disc sample.

Published in:

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Date of Conference:

25-27 Aug. 2003