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Two-dimensional analysis of astigmatism in self-aligned structure semiconductor lasers

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1 Author(s)
Ueno, M. ; NEC Corp., Kawasaki, Japan

0.78-μm AlGaAs-GaAs self-aligned structure (SAS) lasers have been theoretically studied with regard to the relationships between astigmatism and structural parameters. This was done on the basis of a two-dimensional analysis of astigmatism. Analytical results are compared in detail with experimental results regarding astigmatism in MOVPE-grown SAS lasers. Analytical results are shown to agree quite well with experimental results. and that the two-dimensional simulator is very effective in calculating astigmatism accurately. Moreover, analytical results reveal that rectangular-shaped mesa SAS lasers with a slope around the mesa bottom have very small astigmatism when current injection width and the slope gradient around the mesa bottom are relatively small, and that they achieve high power operations

Published in:

Quantum Electronics, IEEE Journal of  (Volume:28 ,  Issue: 6 )