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1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

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9 Author(s)
I. R. Sellers ; Dept. of Phys. & Astron., Univ. of Sheffield, UK ; H. Y. Liu ; K. M. Groom ; D. T. Childs
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A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

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Electronics Letters  (Volume:40 ,  Issue: 22 )