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To bring a breakthrough in the observation of the gamma-ray universe, we are working on the development of Semiconductor Multi-Compton Telescope(SMCT). In the SMCT, all the energy, positional and timing resolution must be high to ensure high sensitivity. The imaging device based on the high resolution CdTe diode and Si, such as CdTe pixel detectors and Double-sided Si Strip Detectors (DSSDs), are promising candidates for the components of the SMCT. Here we report the results of a CdTe pixel detector connected with a low noise analog ASIC. We obtained an energy resolution of 2.5 keV(FWHM) at 122 keV, with a positional resolution of 2 mm. Performance of the first prototype Compton Camera using a DSSD and two CdTe pixel detectors is also described. We irradiated 100% linearly polarised 170 keV γ-ray line to the system and obtained the polarimetric modulation factor of 43%.