Cart (Loading....) | Create Account
Close category search window

Progress in polycrystalline HgI2 used for X-ray imaging detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Schieber, M. ; Sch. of Appl. Sci. & Technol., Hebrew Univ., Jerusalem, Israel ; Zuck, A. ; Khakhan, O. ; Gilboa, H.
more authors

Use of physical vapor deposition (PVD) of polycrystalline HgI2 films on Si-TFT arrays brought about a breakthrough in the use of HgI2 for large area pixellated X-ray imaging. Latest advances in the deposition process led to full-texture high-density films, with highly orientated crystallites, as evidenced for example by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The good structural data also yielded excellent electrical charge transport properties, which approached those of single crystals. Transient charge transport (TCT) with alpha-particle near-surface absorption was used to measure carrier mobility, trapping time, and surface recombination velocity for each sample. Typical electron and hole mobility of high quality polycrystalline HgI2 films were μn = 88 cm2/V · s and μp = 4.1 cm2/V · s, respectively. Trapping times were τn ≅ 18 μs and τp ≅ 3.5 μs, and surface recombination velocities sn ≅ 1.4 × 105 cm/s and sp ≅ 3.7 × 103 cm/s. The performance of these detectors as spectrometers in a standard nuclear spectroscopy system was evaluated. We used a gamma source of 241Am with the characteristic 59.6 keV gamma photo-peak. The full width at half maximum (FWHM) of the detector photo peak depended on its charge transport properties. High quality polycrystalline HgI2 film detectors yield a peak of approximately 38 keV FWHM, while lower quality ones yield a much broader peak of FWHM > 70 keV. Such widths are still inferior to those of a single crystal (typically ∼5 keV), yet the results suggest that further improvement through optimization of manufacturing conditions is possible. The talk reviews our past efforts, recent new results, and plans for the future.

Published in:

Nuclear Science Symposium Conference Record, 2003 IEEE  (Volume:5 )

Date of Conference:

19-25 Oct. 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.