By Topic

Characterization of high resistivity poly-CdZnTe thick films grown by thermal evaporation method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kirn, K.H. ; Dept. of Phys., Korea Univ., Seoul, South Korea ; Na, Y.H. ; Park, Y.J. ; Jung, T.R.
more authors

The high resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity was investigated using time of flight technique. We have measured the average drift mobility and mobility-lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of TOF based on multiple trapping model, We have found that the two dominant localized states related to the Cd vacancy (EV + 0.36 eV) and grain boundary defects (EV + 0.75 eV) play a dominant role in increasing resistivity through compensation process.

Published in:

Nuclear Science Symposium Conference Record, 2003 IEEE  (Volume:5 )

Date of Conference:

19-25 Oct. 2003