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Theoretical and experimental studies of the effects of compressive and tensile strain on the performance of InP-InGaAs multiquantum-well lasers

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8 Author(s)
D. Nichols ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA ; M. Sherwin ; G. Munns ; J. Pamulapati
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The authors have studied, both theoretically and experimentally, the effects of biaxial strain upon the performance characteristics of broad-area InP-InGaAsP-InxGa1-xAs (0.33⩽x ⩽0.73) separate confinement heterostructure multiquantum-well lasers. The theoretical calculations include the effects of strain on the bandstructure and the Auger recombination rates. A pronounced dependence of the threshold current density Jth upon x is observed. The lowest measured Jth is 589 A/cm2 in an 800-μm laser with x=0.68. Also, internal quantum efficiencies as high as unity and loss coefficients as low as 5.6 cm-1 have been measured for x=0.58

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IEEE Journal of Quantum Electronics  (Volume:28 ,  Issue: 5 )