By Topic

Development of CdTe nuclear radiation detectors for spectroscopy and imaging applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Niraula, M. ; Nagoya Inst. of Technol., Japan ; Yasuda, K. ; Agata, Y. ; Nakamura, A.
more authors

CdTe nuclear radiation detectors were developed for spectroscopy and imaging applications. Detectors were fabricated in two different techniques in order to alleviate the poor hole charge transport property in CdTe semiconductor. The first type comprises an M-π-n diode type detector fabricated by growing an n-type CdTe epitaxial layer on the p-like high resistivity CdTe crystal wafer. This detector is operated in a reverse bias mode, which allows us to apply high electric field on the detector without increasing the leakage current noise of the detector. The second type is a multi-electrode pixel type detector working on a small pixel effect. It has three electrodes in each pixel on one side and a common cathode on the opposite side. Performance of both types of detectors will be presented.

Published in:

Nuclear Science Symposium Conference Record, 2003 IEEE  (Volume:5 )

Date of Conference:

19-25 Oct. 2003