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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:9 Help

Stable 30 mW operation at 50 degrees C for strained MQW AlGaInP visible laser diodes

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4 Author(s)
Ueno, Y. ; Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan ; Fujii, H. ; Sawano, H. ; Endo, K.

High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50 degrees C for more than 1000 h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10-4 h-1.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 9 )

Date of Publication: 23 April 1992

Page(s):
860 - 861
ISSN :
0013-5194
INSPEC Accession Number:
4165700
Digital Object Identifier :
10.1049/el:19920543
Date of Current Version :
06 August 2002
Issue Date :
23 April 1992
Sponsored by :
Institution of Engineering and Technology

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