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Stable 30 mW operation at 50 degrees C for strained MQW AlGaInP visible laser diodes

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4 Author(s)
Y. Ueno ; Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan ; H. Fujii ; H. Sawano ; K. Endo

High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50 degrees C for more than 1000 h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10-4 h-1.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 9 )