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A novel shutter control method for growing GaInP strained layers without growth interruption by gas source molecular beam epitaxy (GSMBE) is presented. By using the method, strained single quantum well (SSQW) GaInP/AlInP visible lasers were fabricated by GSMBE, for the first time. The threshold current density of the laser was 329 A/cm2 for the compressive strained case (700 nm in wavelength) and 1.7 kA/cm2 for the tensile strained case (634 nm).
Date of Publication: 23 April 1992