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The effects of channel hot-electron stress on the gate-induced drain leakage current (GIDL) in n-MOSFETs with thin gate oxides have been studied. It is found that under worst case stress, i.e. a high density of generated interface states Delta Dit, the enhanced GIDL exhibits a significant drain voltage dependence. Whereas Delta Dit increases significantly the leakage current at low Vd, it has minor effects at high Vd. On the other hand, the electron trapping was found to increase the leakage current rather uniformly over both low and high Vd regions. In addition, GIDL degradation can be expressed as a power law time dependence (i.e. Delta Ileak=A.tn), and the time dependence value n varies according to the dominant damage mechanism (i.e. electron trapping against Delta Dit), similar to that reported for on-state device degradation.