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This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our technique is based on automatic insertion of sleep transistors for cutting sub-threshold current when CMOS gates are in stand-by mode. Area and speed overhead caused by sleep transistor insertion are tightly controlled thanks to: (i) a post-layout incremental modification step that inserts sleep transistors in an existing row-based layout; (ii) an innovative algorithm that selects the subset of cells that can be gated for maximal leakage power reduction, while meeting user-provided constraints on area and delay increase. The presented technique is highly effective and fully compatible with industrial back-end flows, as demonstrated by post-layout analysts on several benchmarks placed and routed with state-of-the art commercial tools for physical design.