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Nanoscale CMOS circuit leakage power reduction by double-gate device

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4 Author(s)
Keunwoo Kim ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; K. K. Das ; R. V. Joshi ; Ching-Te Chuang

Leakage power for extremely scaled (Leff = 25 nm) double-gate devices is examined. Numerical two-dimensional simulation results for double-gate CMOS device/circuit power are presented from physics principle, identifying that double-gate technology is an ideal candidate for low-power applications. Unique double-gate device features resulting from gate-gate coupling are discussed and effectively exploited for optimal low-leakage device design. Design tradeoffs for double-gate CMOS power and performance are suggested for low-power and high-performance applications. Total power consumptions of static and dynamic circuits and latches for double-gate device are analyzed considering state dependency, showing that leakage current is reduced by a factor of over 10X, compared with conventional bulk-Si counterpart.

Published in:

Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on

Date of Conference:

9-11 Aug. 2004